Search results for "Deep Levels"

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Tin-related double acceptors in gallium selenide single crystals

1998

Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer…

Electron mobilityHole MobilityAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_elementMineralogyDeep LevelsCondensed Matter::Materials Sciencechemistry.chemical_compound:FÍSICA [UNESCO]Condensed Matter::SuperconductivitySelenideNuclear ExperimentConduction BandsGallium Compounds ; III-VI Semiconductors ; Tin ; Impurity States ; Deep Levels ; Electrical Resistivity ; Hall Effect ; Hole Mobility ; Conduction BandsImpurity StatesElectrical ResistivityHall EffectIII-VI SemiconductorsPhonon scatteringCarrier scatteringDopingUNESCO::FÍSICAAcceptorchemistryTinGallium CompoundsTinIndiumJournal of Applied Physics
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